JPH0241583B2 - - Google Patents
Info
- Publication number
- JPH0241583B2 JPH0241583B2 JP12748585A JP12748585A JPH0241583B2 JP H0241583 B2 JPH0241583 B2 JP H0241583B2 JP 12748585 A JP12748585 A JP 12748585A JP 12748585 A JP12748585 A JP 12748585A JP H0241583 B2 JPH0241583 B2 JP H0241583B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- discharge
- target
- members
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000956 alloy Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- BGPVFRJUHWVFKM-UHFFFAOYSA-N N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] Chemical compound N1=C2C=CC=CC2=[N+]([O-])C1(CC1)CCC21N=C1C=CC=CC1=[N+]2[O-] BGPVFRJUHWVFKM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12748585A JPS61284571A (ja) | 1985-06-12 | 1985-06-12 | 放電電極 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12748585A JPS61284571A (ja) | 1985-06-12 | 1985-06-12 | 放電電極 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61284571A JPS61284571A (ja) | 1986-12-15 |
| JPH0241583B2 true JPH0241583B2 (en]) | 1990-09-18 |
Family
ID=14961105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12748585A Granted JPS61284571A (ja) | 1985-06-12 | 1985-06-12 | 放電電極 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61284571A (en]) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2797111B2 (ja) * | 1989-03-27 | 1998-09-17 | 東京エレクトロン株式会社 | スパッタ装置 |
| JP2657170B2 (ja) * | 1994-10-24 | 1997-09-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2000144399A (ja) * | 1998-10-30 | 2000-05-26 | Applied Materials Inc | スパッタリング装置 |
| CN107523831B (zh) * | 2017-09-30 | 2019-01-18 | 江阴康强电子有限公司 | 粗化浸镀子槽 |
-
1985
- 1985-06-12 JP JP12748585A patent/JPS61284571A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61284571A (ja) | 1986-12-15 |
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